Undergraduate study programme

Ak.g.2014./2015.2015./2016.2016./2017.2017./2018.

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Electronics I P204

ECTS 6 | P 45 | A 30 | L 15 | K 0 | ISVU 74043

Course groups

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Course lecturers

HORVAT GORAN, Associate
ŠNELER LEON, Associate
VLAOVIĆ JELENA, Associate
MATIĆ TOMISLAV (st.), Lecturer
VINKO DAVOR, Lecturer
OPAČAK MILAN, Associate

Course description

Basics of semiconductor physics. Charge carrier generation. Current flow mechanisms in semiconductor. PN and metal-semiconductor junctions: static and dynamic characteristics. Solid-state diodes: static and dynamic characteristics, types of solid-state diodes. Bipolar junction transistor (BT): working principle, static IU- characteristics, dynamic models, frequency dependence of parameters. Junction and MOS FET: working principle, static IU- characteristics, dynamic models, frequency dependence of parameters. Thyristors: working principle, classification. Basic bipolar and unipolar transistor amplifiers. Power amplifiers: A, AB and B-class. Operational amplifier. Comparators. Basic logic circuits.

Knowledge and skills acquired

-basic knowledge of semiconductor components, physical and electronics circuits
-skills for analysis of semiconductor components and their adequate application in circuits

Teaching methods

Lectures, problem solving, laboratory practice.

Student assessment

Control tests, control of preparation for laboratory practice.

Obligatory literature

1. Švedek, T. Poluvodičke komponente i osnovni sklopovi, Svezak I, Poluvodičke komponente, Graphis, 2001., Zagreb

2. Švedek, Poluvodičke komponente i osnovni sklopovi, Svezak I, Poluvodičke komponente, Graphis, Zagreb, 2001 (udžbenik sveučilišta J.J.Strossmayer u Osijeku)

3. P. Biljanović, Elektronički sklopovi, Školska knjiga, Zagreb, 1989.

Pretraži literaturu

Recommended additional literature

1. A.S. Sedra, K.C.Smith, Microelectronic Circuits, 3. Edition, Saunders College Publishing, New York, 1991.

ECTS credits

An ECTS credit value has been added according to calculation of time required for studying and successful course completion.

Examination methods

The final examination consists of the written and the oral part. Students can take the final examination after the completion of lectures and exercises.

Course assessment

Examination, tests, discussion.

Overview of course assesment

Learning outcomes
Upon successful completion of the course, students will be able to:

1. Definirati i razumjeti fizikalne značajke poluvodičkih materijala, generiranja slobodnih nosilaca naboja te vođenja struje u poluvodičima.

2. Analizirati statička i dinamička svojstva PN-spoja i spoja metal-poluvodič.

3. Definirati načela rada dioda, bipolarnih i unipolarnih tranzistora na temelju strujno naponskih karakteristika te dinamičkih modela.

4. Analizirati rad osnovnih poluvodičkih energetskih sklopki.

5. Definirati osnovne poluvodičke optoelektroničke komponente.

6. Analizirati osnovna pojačala s bipolarnim i unipolarnim tranzistorima.

7. Opisati načela rada operacijskih pojačala i komparatora.

8. Definirati osnovne logičke sklopove.



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Student's activity Workload ECTS (Workload/30) Learning outcomes
Upon successful completion of the course, students will be able to:
Teaching
method
Assessment method Points
Attendance
Lectures, Auditory exercises, Laboratory exercises

ECTS
Lectures, Auditory exercises, Laboratory exercises Attendance register. Mandatory attendance percentage is:
%

This percentage defines the minimum workload for the activity. The maximum is defined by the study programme.
Min

Max

Oral exam Workload
ECTS

Oral exam Assessment of student's answers Min

Max

Σ Activities Σ Workload
0
Σ ECTS
0
Σ Max
0